Principal Engineer - Compact Device Model Engineer
Karnataka, India, India • Posted June 01, 2026
Job Type:
Full-time
Location:
Karnataka, India
Posted:
June 01, 2026
Category:
other-general
Application Deadline:
June 08, 2026
Role Description
Title: Principal Engineer - Device Model Engineer
About GlobalFoundries:
GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com .
Introduction:
Perform model extractions for DC and RF frequencies for devices like MOSFET, HV FETs like LDMOS, Diodes, Varactors, Resistors etc. and develop a compact model based on device physics for SOI, Bulk and GaN technologies. Responsible for the definition of test structures and layouts for the necessary devices and submit tests like DC-CV, DC-IV, S-parameters, Noise, Mismatch etc. for electrical characteriza...
About GlobalFoundries:
GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com .
Introduction:
Perform model extractions for DC and RF frequencies for devices like MOSFET, HV FETs like LDMOS, Diodes, Varactors, Resistors etc. and develop a compact model based on device physics for SOI, Bulk and GaN technologies. Responsible for the definition of test structures and layouts for the necessary devices and submit tests like DC-CV, DC-IV, S-parameters, Noise, Mismatch etc. for electrical characteriza...
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